We began research into high-purity metallic arsenic in 1961 and achieved mass production in 1972. Since then, we have established an unwavering position as a top manufacturer of high-purity metallic arsenic. We currently supply product that meets nearly all of the demand in Japan and also export large amounts.
In addition to gallium arsenide monocrystal raw material, high-purity metallic arsenic is used as a dopant material for silicon monocrystals and as a raw material for chalcogenide glass.
We offer chunk-shaped products as well as the rod-shaped products used in molecular-beam epitaxy [MBE], and support varied sizes.

We manufacture gallium phosphide polycrystals, a raw material for gallium phosphide LEDs that emit red, green, orange, and other colors of light.In addition to Zn3As2, ZnAs2, and other arsenic compounds used in semiconductor doping, we handle high-purity compounds containing phosphorus, sulfur, and tellurium such as Zn3P2, In2S3, and GaTe.
We also manufacture selenium compounds for CIGS solar cell development and high-purity sulfur for battery material research and development.We are also able to handle difficult-to-synthesize compounds, from the synthetic testing stage onward.