Material and parts
Aluminium nitride (AIN) ceramics
Semiconductor manufacturing equipment (for front-end processes) must support demands for design rule refinement and increased wafer diameter (300 mm and greater). The selection of materials for equipment components is crucial.
Aluminum nitride (AlN) offers excellent thermal conductivity, thermal radiation (heat radiation), thermal shock resistance, and electrical insulation, along with thermal expansion suited to Si wafers.
Features
- Has high thermal conduction, thermal emissivity, and soaking capability.
- Is resistant to thermal shock and withstands rapid heating and cooling.
- Has low thermal expansion suited to Si.
- Has excellent resistance to corrosion by fluorine-based gases.
Applications
- Susceptors for semiconductor manufacturing equipment (CVD, etching, etc.), electrostatic chucks, heater soaking plates, vacuum chucks, heaters
- Dummy wafers
- Targets
- Compound semiconductor device components
Characteristics (typical values)
| Item | Grade | ||||
| FAN-090 | FAN-170 | FAN-200 | FAN-230 | ||
| Thermal conductivity | W/m・K（RT） | 90 | 170 | 200 | 230 |
| Thermal emissivity | （100℃） | 0.93 | |||
| Thermal expansion coefficient | 10-6/℃（RT～400℃） | 4.5 | |||
| Thermal shock resistance | ΔT（Water drop method） | 400（Reference value） | |||
| Insulation resistance | Ω・cm（RT） | ＞1013 | |||
| Dielectric strength | kV/mm（RT） | 15 | |||
| Dielectric constant | （1MHz） | 8.8 | |||
| Dielectric loss | 10-4（1MHz） | 5 | |||
| Flexural strength | MPa | 250～300 | 300～400 | ||
| Density | g/cm3 | 3.2 | 3.3 | ||
| Y（yttrium） | % | 0.0 | 3.4 | ||
| O（oxygen） | % | 0.6 | 1.7 | ||
| Characteristics | High purity | General purpose | Thermal conduction | Thermal conduction | |